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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION *High Collector-Base Voltage: VCBO = 1500V(Min) *High Switching Speed APPLICATIONS *Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 1500 800 6 8 15 4 50 150 -55~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.49 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN KSC5088 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 4V; IC=0 1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 6A; VCE= 5V 5 fT Current-Gain--Bandwidth Product IC= 1A ; VCE= 10V 3 MHz Switching Times ts Storage Time IC= 6A; IB1= 1.2A; IB2= -2.4A; VCC= 200V 3.0 s tf Fall Time 0.2 s isc Websitewww.iscsemi.cn 2 |
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